| 摘要 |
PROBLEM TO BE SOLVED: To improve the productivity of a plane emitting laser by forming a high resistance area by heat-oxidizing a film to be oxidized from its edge for a prescribed time under the condition that stress is applied to the layer. SOLUTION: After forming respective layers on a substrate 1, a mesa 7 is formed so as to expose the side plane of a layer 6a to be oxidized. Then, a stress control pattern 8 composed of silicon oxide is formed on a (p) type DBR 6 whereupon the mesa 7 is formed. The stress control pattern 8 has a shape almost equal to the shape of a current bottleneck area to be formed on the layer 6a to be oxidized. After forming the stress control pattern 8, the layer 6a to be oxidized is selectively oxidized from the exposed part on the side planes of the mesa 7 by heating to 430 deg.C in water vapor. Since the expansion coefficient of the stress control pattern 8 differs from those of other layers, such as (p) type DBR 6, stress in the direction shown by the arrow line is generated at 400 deg.C. Such stress controls the progress of oxidation front in the oxidation from the edge of the layer 6a to be oxidized. |
