| 摘要 |
<p>Conventionally, when the interlayer insulating film of a semiconductor device is a CF film, F-containing gas escapes through the CF film when the CF film is heated to, e.g., 400 to 450 °C to form a tungsten interconnection, whereby the interconnection is corroded and the thickness of the film decreases causing various problems. In order to solve the problems, according to the invention, the heat stability is enhanced. A compound gas of C and F, e.g., C4F8 gas and a hydrocarbon gas, e.g., C2H4 gas are used as film-forming gases. These gases are changed into a plasma to form a CF film on the semiconductor wafer (10) by using the active species. Then, a gas for forming a hydrogen plasma, e.g., an H2 gas is introduced and is changed into a plasma, and the CF film formed on the wafer (10) is irradiated with the H plasma. Upon being irradiated with the H plasma, unreacted F and weak bond existing in the CF film are removed, whereby firm bonds are obtained, the bonds are hardly cut even at high temperature. Therefore the heat stability is improved.</p> |
