| 发明名称 |
GAN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THESAME |
| 摘要 |
A method of producing a GaN single crystalline substrate, characterized by comprising forming a mask layer (8) having a plurality of opening windows (10) mutually spaced on a GaAs substrate (2), and growing an epitaxial layer (12) of GaN on the mask layer (8).
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| 申请公布号 |
CA2311132(A1) |
申请公布日期 |
1999.05.14 |
| 申请号 |
CA19982311132 |
申请日期 |
1998.10.29 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
OKAHISA, TAKUJI;MOTOKI, KENSAKU;MATSUMOTO, NAOKI |
| 分类号 |
C30B25/02;H01L21/20;H01L33/00;H01S5/02;H01S5/323;(IPC1-7):H01L21/20;H01S3/18;H01L21/203;H01L21/205;H01L21/208 |
主分类号 |
C30B25/02 |
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