| 摘要 |
Using an aqueous solution of hydrogen chloride and a surfactant, residue from a tungsten slurry is cleaned without laborious, time-consuming abrasive pressure. Many surfaces, such as polypropylene plastic may be cleaned without noticeable deterioration to the surface. The solution is applied to a surface containing dried slurry residues, is allowed to soak for a period of time, and then is removed, typically by rinsing in water. Such a procedure removes the tell-tale orange stains typically present on surfaces which have come into contact with iron-containing slurries, particularly those used to polish tungsten. This is accomplished in a chemical reaction without laborious manually-applied abrasive scrubbing. Since dried slurry residues contribute to particulate contaminants within the slurry, more frequent and complete residue removal reduces the number of particulates within the slurry. Consequently, semiconductor surface scratching is reduced and the yields are necessarily increased. Moreover, damage to the CMP tool surfaces from particulate scratching is also reduced. As a bonus, the cosmetic appearance of a CMP area within a fabrication facility is markedly improved as a result of easy, frequent residue cleanings.
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