| 摘要 |
<p>The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising an ether of a C1 to C4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.021 mole/cm3 or less, a boiling point of about 175 °C or more at atmospheric pressure and a weight average molecular weight of about 100 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.</p> |
