| 摘要 |
<p>A method for manufacturing a thin film AMA is disclosed. The second sacrificial layer (215) is formed by using amorphous silicon, poly silicon or a material having fluidity and the first sacrificial layer (145) is formed by using amorphous silicon or poly silicon. The light efficiency is enhanced by the reflecting member having an even surface after the first (145) and the second (215) sacrificial layers are formed in order to have even surfaces. In addition, the active matrix (100), the active layer (165) and the reflecting member (220) have no damages because the second sacrificial layer (215) is removed by using the oxygen plasma or the vapor of bromine fluoride or xenon fluoride and the first sacrificial layer (145) is removed by using the vapor of bromine fluoride or xenon fluoride.</p> |
