发明名称 |
METHOD FOR FORMING THIN TUNNELING WINDOWS IN EEPROMs |
摘要 |
<p>A method for making submicron dielectric windows for electron tunneling between a floating gate and substrate in a semiconductor EEPROM device. A mask edge overlying an oxide layer on a substrate is undercut a small distance, the area surrounding that small distance is built up with oxide, then a thin layer of oxide is formed in the undercut distance to serve as a tunneling window.</p> |
申请公布号 |
EP0664051(B1) |
申请公布日期 |
1999.05.12 |
申请号 |
EP19940922441 |
申请日期 |
1994.06.17 |
申请人 |
ATMEL CORPORATION |
发明人 |
LARSEN, BRADLEY, J.;ERICKSON, DONALD, A. |
分类号 |
H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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