发明名称 REINFORCING MATERIAL FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent interfacial release and voids by a method wherein an adhesive layer is formed on one surface of a metallic sheet, while the adhesive layer is provided with adhesive parts and striped or latticed non-adhesive parts as well as the area of the adhesive parts to the metallic sheet is set up within a specific range. SOLUTION: An adhesive layer 2 made of an adhesive is formed on a metallic sheet 1, while adhesive parts 4a and striped or latticed non-adhesive parts 4b are formed on the adhesive layer 2. At this time, the area of the adhesive parts 4a to the metallic sheet 1 is set up within a range of 20-99%. That is, the area of the adhesive parts 4a to the metallic sheet 1 is set up to be the ratio of the area (the area reducing the area of a bored hole 5 and through-holes 3 from the entire metallic sheet area into a specific shape) with respect to 100%, reducing the the area of the non-adhesive parts 4b from the adhesive layer 2. Through these procedures, the occurrence of interfacial peel off and voids, etc., can be prevented.
申请公布号 JPH11126802(A) 申请公布日期 1999.05.11
申请号 JP19970288855 申请日期 1997.10.21
申请人 TOMOEGAWA PAPER CO LTD 发明人 NARUSHIMA HITOSHI
分类号 H01L21/60;H01L23/12;H01L23/50;H05K1/05;H05K3/00;H05K3/38;(IPC1-7):H01L21/60 主分类号 H01L21/60
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