摘要 |
A wafer to be heat-treated is placed in a heat treatment chamber defined by a heat treatment vessel, and the wafer is heat-treated by radiant heat radiated by a heat source. A gas is supplied through a gas passage formed along the outer surface of an inner wall of the heat treatment vessel and having a portion extending near the heat source. The gas heated in the portion of the gas passage extending near the heat source by the heat source is blown toward a substantially central portion of the wafer as complementary heating means for increasing the temperature of the central portion of the wafer.
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