| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a data errasure method capable of reducing minute band- to-band tunneling current occurring at the time of erasure, preventing the deterioration of a gate oxide film under a floating gate by hot carriers generated by this band-to-band tunneling current and micro-fabricating a cell. SOLUTION: At the same time when the source diffusion layer 2 and the floating gate 5 are impressed by a voltage of 5 V and a voltage of -10 V respectively, the N well 8 and the P well 9 installed in a semiconductor substrate 1 are impressed by a voltage of 2 V between the source and the ground. By this, the band-to-band tunneling current near the source diffusion layer 12 can be reduced, deterioration of the gate oxide film 4 under the floating gate 5 by hot carriers generated by this band-to-band tunneling current is prevented and the reliability is improved.</p> |
