| 摘要 |
PROBLEM TO BE SOLVED: To obtain a capacitor which is capable of preventing increase in leakage current and prevent decrease in permitivity of a dielectric film. SOLUTION: A semiconductor device is provided with a dielectric film 118 made of a metal oxide, and electrodes 116 and 119 which are formed on both sides of the dielectric film 118. Further, it is provided with a capacitor in which at least one electrode 116 is formed of a film such that it is made mainly of metallic element having conductivity in its oxide. Furthermore, an intermediate layer 117 containing metallic element and additive element which is different from the metallic element, and oxygen is formed between at least one electrode 116 and dielectric film 118. |
