发明名称 |
Method of producing silicon nitride ceramics having thermal high conductivity |
摘要 |
The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000 DEG C. under the nitrogen pressure of 1 to 100 atmospheres.
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申请公布号 |
US5902542(A) |
申请公布日期 |
1999.05.11 |
申请号 |
US19960766317 |
申请日期 |
1996.12.13 |
申请人 |
JAPAN AS REPRESENTED BY DIRECTOR GENERAL OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY;FINE CERAMICS RESEARCH ASSOCIATION |
发明人 |
HIRAO, KIYOSHI;WATARI, KOJI;TORIYAMA, MOTOHIRO;KANZAKI, SYUZO;OBATA, MASAAKI |
分类号 |
C04B35/584;C04B35/593;C04B35/638;C04B35/64;C04B35/645;(IPC1-7):C04B35/584 |
主分类号 |
C04B35/584 |
代理机构 |
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