FORMATION OF MINUTE RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To eliminate residue of negative resist material, by setting the exposing surface of a negative resist layer downward along the direction of gravity when the negative resist layer exposed by electron beam is immersed into developing solution. SOLUTION: When formation of a positive resist layer 20 comprising first and second applied layers 21 and 22 of methyl polymethacrylate on a ground layer 10 of an etching object layer is finished, a negative resist layer 30 comprising chloromethylated polyalpha methylstyrene is formed. Then, the main surface of the formed negative resist layer 30 is exposed by an electron beam 40 at the pattern in correspondence with a minute resist pattern 90 to be finally obtained. Then, the ground layer 10 is turned back altogether so that the exposing surface of the exposed negative resist layer 30 faces downward in the direction of gravity. The layer is immersed into developing liquid 50 in this state.