发明名称 |
Optoelectronic devices |
摘要 |
A single cavity mode optoelectronic device, such as a VCSEL, an RCLED or a DFB laser diode, comprises an etched-pillar or mesa structure including an optically active region and strain-applying means in the form of a layer of polymer material having a coefficient of thermal expansion which is greater than that of the optically active region. The layer surrounds the optically active region so as to apply a compressive strain to the latter so as to compensate at least partially for temperature-induced changes in the gain spectrum peak of the optically active region caused by ohmic heating of the device.
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申请公布号 |
US5903585(A) |
申请公布日期 |
1999.05.11 |
申请号 |
US19960763714 |
申请日期 |
1996.12.13 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
DAWSON, MARTIN DAVID;BESTWICK, TIMOTHY DAVID;TAKIGUCHI, HARUHISA |
分类号 |
H01S3/05;H01S5/00;H01S5/02;H01S5/06;H01S5/068;H01S5/183;H01S5/22;H01S5/42;(IPC1-7):H01S3/19 |
主分类号 |
H01S3/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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