发明名称 Magneto-resistance effect device with improved thermal resistance
摘要 A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.
申请公布号 US5903708(A) 申请公布日期 1999.05.11
申请号 US19950453788 申请日期 1995.05.30
申请人 SONY CORPORATION 发明人 KANO, HIROSHI;SUZUKI, ATSUKO;YAOI, TOSHIHIKO
分类号 G01R33/09;(IPC1-7):H01L43/00 主分类号 G01R33/09
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