发明名称 |
Stray magnetic shielding for a non-volatile MRAM |
摘要 |
A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn-Zn-Ferrite, Ni-Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.
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申请公布号 |
US5902690(A) |
申请公布日期 |
1999.05.11 |
申请号 |
US19970806275 |
申请日期 |
1997.02.25 |
申请人 |
MOTOROLA, INC. |
发明人 |
TRACY, CLARENCE J.;CHEN, EUGENE;DURLAM, MARK;ZHU, THEODORE;TEHRANI, SAIED N. |
分类号 |
G11C11/15;H01L27/22;(IPC1-7):B32B9/00 |
主分类号 |
G11C11/15 |
代理机构 |
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主权项 |
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地址 |
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