| 摘要 |
A stress compensation type semiconductor laser emitting laser light of 0.98 mu m DIFFERENCE 1.02 mu m wavelength includes a semiconductor substrate, a cladding layer disposed on the semiconductor substrate, and a multiple quantum well structure active layer disposed on the cladding layer and comprising a plurality of well layers and barrier layers. In the laser, when the number, strain, and thickness of the well layers are n, fw, and tw, respectively, and the number, strain, and thickness of the barrier layers are m, fb, and tb, respectively, the average strain fav of the well layers and the barrier layers, and the total thickness ttotal of the well layers and the barrier layers is given by where upsilon is the Poisson ratio, bo is the magnitude of a Burgers vector of a perfect dislocation, bp is the magnitude of a Burgers vector of partial dislocation, and rc is the half loop radius of a dislocation. Therefore, an active layer having required stress compensation performance is realized with high reliability and high reproducibility.
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