| 摘要 |
<p>PROBLEM TO BE SOLVED: To inspect tunnel oxide films used for a nonvolatile memory, such as the EEPROM, etc., with good accuracy by chip units. SOLUTION: Tunnel oxide film evaluating patterns 5 which are equivalent to an actually used memory cell are respectively put in chips, and pads 3 and 4 are respectively attached to the gate and diffused layer of each pattern 5, so that the state of each tunnel oxide film can be monitored. Therefore, the thickness of each tunnel oxide film can be estimated, and film quality can be confirmed by checking the generated voltage and the time until the oxide film is broken by making a constant current to flow to the pattern 5.</p> |
