| 摘要 |
<p>PROBLEM TO BE SOLVED: To miniaturize a semiconductor device and to reduce cost by increasing the number of effective chips that can be manufactured from one wafer, by providing the constitution wherein a wiring is brought into contact with at least one lower end part of a plurality of vias and separated to the upward of a region in which an active element is not present. SOLUTION: Impurity-diffused regions 32 and 33 and a gate electrode 31 are formed on a silicon crystal substrate 35, and a transistor is constituted. Furthermore, a part of an active element region 41 is constituted. A stress buffer wiring 15 is formed on an interlayer insulating film 17 at the upper part to the region. Conduction to a active element and the like is performed through this stress buffer wiring 15. Furthermore, when these parts are projected and overlapped on the surface where an electrode pad 11 for the semiconductor chip 11 is provided, the electrode pad 11 is provided so as to cover the active element region 41 for the active element region 41. Stress releasing vias 12a, 12b, 12c and 12d are provided at four corners of the electrode pad 11 at the part where the active element region 41 is not present.</p> |
