发明名称 PHOTOMASK AND ITS DESIGNING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To make it possible to form hole patterns of different sizes with high accuracy by setting the width size of translucent regions in such a manner that the photosensitive resin patterns on an imagery plane which are exposure transfer patterns of transparent regions resized larger than prescribed sizes attain prescribed sizes. SOLUTION: The sizes of the mask patterns of part of the regions are resized larger than the prescribed sizes and the translucent regions of the prescribed width are arranged on the peripheries of the mask patterns of the transparent regions increased in these sizes. Further, light shielding regions are formed on the peripheries of the translucent regions. The width size of the translucent regions is so regulated that the photosensitive resin patterns on the imagery plane which are the exposure transfer patterns of the transparent regions resized larger than the prescribed sizes attains the prescribed sizes. For example, the photomask is formed by laminating a halftone film 2 and the light shielding film 3 on a transparent substrate 1 so as to have the first light shielding patterns, the first halftone patterns 5 and the halftone regions 6.</p>
申请公布号 JPH11125894(A) 申请公布日期 1999.05.11
申请号 JP19970292822 申请日期 1997.10.24
申请人 NEC CORP 发明人 ISHIDA SHINJI;YASUSATO TADAO
分类号 G03F1/29;G03F1/32;G03F1/36;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/29
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