| 摘要 |
PROBLEM TO BE SOLVED: To enable accurate measurement of an alignment accuracy in a lithography with a good reproducibility. SOLUTION: A measuring ground pattern 13 is a recessed pattern of a square shape of 10μm×10μm formed on a substrate. A measuring top pattern 15 is an operating pattern of a square shape of 10μm×10μm formed with positive or negative resist on the ground pattern 13. The top pattern 15 is positioned on the pattern 13 so that the pattern 15 is rotated by 40 degrees with respect to the pattern 13 and the central point of the pattern 15 coincides with that of the pattern 13. Lengths a, b, c and d of the ground pattern 13 overlapped with the top pattern 15 are measured, and a shift in the central point between the top and ground patterns 15 and 13 is calculated in accordance with equations of Xreg= (b-a)/4 and Yreg= (d-c)/4, where Xreg is a shift in an X axis direction and Yreg is a shift in a Y axis direction. |
