| 发明名称 |
Process for making crack free silicon carbide diffusion components |
| 摘要 |
This invention is a process for making crack-free silicon carbide components wherein the level of free silica in the raw batch is controlled.
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| 申请公布号 |
US5902760(A) |
申请公布日期 |
1999.05.11 |
| 申请号 |
US19970926640 |
申请日期 |
1997.09.10 |
| 申请人 |
SAINT-GOBAIN/NORTON INDUSTRIAL CERAMICS CORPORATION |
发明人 |
DYNAN, STEPHEN;SHINDLE, JACK;VAYDA, JOHN |
| 分类号 |
C04B35/626;C01B31/36;C04B35/565;C04B35/573;(IPC1-7):C04B35/569 |
主分类号 |
C04B35/626 |
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