| 摘要 |
PROBLEM TO BE SOLVED: To provide the semiconductor device of a high electron mobility for power, for which Schottky junction characteristics are stabilized. SOLUTION: A first semiconductor layer doped with (n)-type impurities, a second semiconductor layer formed on the first semiconductor layer whose electron affinity is stronger and whose forbidden bandwidth is smaller than that of the first semiconductor layer and whose third semiconductor layer doped with the (n)-type impurities whose electron affinity is weaker and forbidden band width is larger than the second semiconductor layer are laminated on a GaAs substrate 1 in this order. Then this semiconductor device is provided with a source electrode 10 and a drain electrode 11 facing opposite the third semiconductor layer by an ohmic junction and a gate electrode 13 facing the third semiconductor layer by a Schottky junction. The third semiconductor layer which is GaAs doped with the (n)-type impurities, the second semiconductor layer is InGaAs and a heterojunction field effect transistor the electron density of which is 3×10<12> cm<-2> obtained.
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