发明名称 BONDING PAD OF SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To prevent a peeling between a metal of high melting point and a BPSG film used for a bimetal made by a plurality of layers, for instance aluminum layers, filled with a tungsten and the like. SOLUTION: The BPSG film 2 is formed on a field film oxide 1 and a NSG film 9 (a film without including an impurity such as boron and the like) is formed on the BPSG film 2. A barrier metal layer 3, a lower metal pad 4, and an upper metal pad 5 are formed on the same, the lower metal pad 4 and the upper metal pad 5 are connected together by a lot of holes 7 filling up the tungsten in an interlayer insulation film 6 by CVD technology, and the uppermost passivation film 8 is opened on the upper metal pad 5.
申请公布号 JPH11126776(A) 申请公布日期 1999.05.11
申请号 JP19970289860 申请日期 1997.10.22
申请人 NEC CORP 发明人 UEDA TAKASHI;NAKANO NORIO
分类号 H01L23/52;H01L21/3205;H01L21/60 主分类号 H01L23/52
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