发明名称 |
GaAs-based MOSFET, and method of making same |
摘要 |
It has been found that a Ga-oxide-containing layer is substantially not etched in HF solution if the layer is a Ga-Gd-oxide with Gd:Ga atomic ratio of more than about 1:7.5, preferably more than 1:4 or even 1:2. This facilitates removal of a protective dielectric (typically SiO2) layer after an ohmic contact anneal, with the Ga-Gd-oxide gate oxide layer serving as etch stop and not being adversely affected by contact with the HF etchant. Gd-Ge-oxide also exhibits a composition-dependent etch rate in HCl:H2O.
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申请公布号 |
US5903037(A) |
申请公布日期 |
1999.05.11 |
申请号 |
US19970804782 |
申请日期 |
1997.02.24 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
CHO, ALFRED YI;HONG, MINGHWEI;LOTHIAN, JAMES ROBERT;MANNAERTS, JOSEPH PETRUS;REN, FAN |
分类号 |
H01L29/78;B82B1/00;H01L21/28;H01L21/336;H01L21/8234;H01L27/088;H01L29/51;(IPC1-7):H01L21/316;H01L23/58 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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