发明名称 Integrated circuit with improved pre-metal planarization
摘要 An integrated circuit wherein a planarization step has been performed before the primary metal deposition step, but after deposition of the adhesion and barrier layers. Thus the adhesion and barrier layers are present on the sidewalls of contact holes, but do not underlie the whole extent of the primary metallization.
申请公布号 US5903054(A) 申请公布日期 1999.05.11
申请号 US19970915195 申请日期 1997.08.20
申请人 STMICROELECTRONICS, INC. 发明人 SARDELLA, JOHN C.
分类号 H01L21/768;(IPC1-7):H01L23/48 主分类号 H01L21/768
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