| 摘要 |
The invention relates to insulating III-V compound semiconductors such as, for example, InP and In>x<Ga>1-x<As which, at present, can be produced by doping with Fe, Ti, Cu or Cl. In this process, however, unwanted phenomenon often occur such as high diffusivity of the dopant, exchange with p-dopants, poor crystalline quality and/or poor compensation during the injection of electrons and electron holes. In new methods, the semiconductor is doped with Ru, whereby low energy levels are generated in the band gap of the semiconductor. Said energy levels lead to a reduction of the charge carrier concentration close to that of the intrinsic concentration. In order to increase semi-insulating Ru-doped III-V semiconductors, for example, on InP based layers, the application of phosphor-precursors is beneficial, said phosphor-precursors containing less than three hydrogen atoms on the phosphane. A charge carrier compensation can be produced by ruthenium doping as well as by means of electron injection and electron hole injection. The method enables the precipitation of semi-insulating layers whose dopant comprises very low diffusion coefficients and does not participate with p-dopants in exchange reactions. The method also enables the semi-insulating semiconductor to be used as an insulating layer and/or as an active structural element layer in structural elements. |
