发明名称 DEVICE AND METHOD FOR CRYSTAL GROWTH BY LEVITATION ON GAS FILM
摘要 <p>The invention concerns a method for preparing crystals by levitation on gas film and a device for implementing said method. The invention aims essentially at obtaining crystals having sufficient size, shape and quality to enable a study of their structure. and the aim is achieved by a method for crystal growth characterised in that said crystal is grown in a medium such as a drop of solution levitated on a gas film. The method is particularly useful for studying the structure of organic and/or biological molecules or can be used as a separation technique by crystal fractionation.</p>
申请公布号 WO1999022047(A1) 申请公布日期 1999.05.06
申请号 FR1998002271 申请日期 1998.10.23
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