| 摘要 |
A method and apparatus for performing a specified test on a semiconductor memory device having a clock generating circuit (13) and a control circuit (15) in which the clock generating circuit generates a clock signal (CK) in response to an operation request signal (Sx) and the control circuit generates a reset signal (S4) for stopping generation of the clock signal after a predetermined period of time. The control circuit also generates at least one operation control signal (S2, S3) for performing a fundamental operation of the memory device in response to the clock signal. The test is performed by inputting a test mode signal (St) to the semiconductor memory device to initiate the specified test, delaying generation of the reset signal for a period of time exceeding the predetermined period of time, carrying out the specified test while the test mode signal is being input, and terminating the specified test by stopping input of the test mode signal. A fundamental operation is performed over a relatively long period of time (a long cycle) in a semiconductor memory device of the type which generates an internal clock signal. Since a failure which appears only in a long cycle operation can be detected, a test for a short circuit between a bit line (B) and a cell plate (C) can be performed. <IMAGE> |
