PROCESS AND APPARATUS FOR PREPARATION OF EPITAXIAL SILICON LAYERS FREE OF GROWN-IN DEFECTS

摘要

The present invention relates to the preparation of epitaxial single crystal silicon wafers free of grown-in defects caused by the presence of particles on the surface of the single crystal silicon wafer substrate prior to epitaxial deposition. The process comprises cleaning a substrate to remove particles which are present on the substrate surface, the cleaning being performed under a substantially particle free atmosphere, and then depositing an epitaxial silicon layer free of grown-in defects on the substrate surface, the epitaxial deposition being performed in-line with the substrate cleaning such that the substrate remains under the substantially particle free atmosphere after cleaning and until epitaxial deposition is complete.