Verfahren und Tiegel zur Herstellung eines Verbundhalbleiter-Kristalles

摘要

Provided are a method of preparing a compound semiconductor crystal by forming a boron or boron compound containing layer on an inner surface of a crucible and heat treating the same thereby forming a B2O3 containing layer, and a crucible which is employed for preparing the compound semiconductor crystal. According to this method, it is possible to previously form a homogenous B2O3 film on the crucible surface while preventing the B2O3 film from incomplete coating and heterogeneous coating. Consequently, it is possible to prevent a raw material melt from wetting to a container and to suppress polycrystallization, thereby preparing a compound semiconductor single crystal in an excellent yield.