Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen

摘要

A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means (15) setting a first temperature and another electric heating means (15) setting a second temperature higher than the first temperature. The wafer(s) (2) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor (4); and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.