| 摘要 |
A novel silicon-base thermoelectric transducing material containing a P- or Ntype semiconductor obtained by adding various impurities to Si, which is produced with good productivity at low cost and has a stable quality and a high performance index. Generally when various elements are added to Si, the Seebeck coefficient of the material decreases with the carrier concentration until the carrier concentration exceeds 1018 M/m3, and a minimum value of the Seebeck coefficient is in a range from 1018 to 1019 M/m3. The material of the invention is a P- or N-type semiconductor having a carrier concentration of 1017 to 1020 M/m3 and containing Si and 0.001 to 0.5 atomic % of one or more elements of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, B, Al, Ga, In, and T1, or one or more elements of N, P, As, Sb, Bi, O, S, Se, and Te, and another material is a P- or N-type semiconductor having a carrier concentration of 1019 to 1021 M/m3 and containing Si and 0.5 to 10 atomic % of one or more of the elements.
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