发明名称 |
Field emission electron source, method of producing the same, and use of the same |
摘要 |
<p>A field emission electron source comprising an electrically conductive substrate 1, an oxidized or nitrided porous polysilicon layer 6 formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film 7 formed on said oxidized or nitrided porous polysilicon layer. Wherein a voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film. <IMAGE></p> |
申请公布号 |
EP0913849(A2) |
申请公布日期 |
1999.05.06 |
申请号 |
EP19980116103 |
申请日期 |
1998.08.26 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
KOMODA, TAKUYA;KOSHIDA, NOBUYOSHI |
分类号 |
H01J1/30;H01J1/308;H01J1/312;H01J31/12;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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