发明名称 Field emission electron source, method of producing the same, and use of the same
摘要 <p>A field emission electron source comprising an electrically conductive substrate 1, an oxidized or nitrided porous polysilicon layer 6 formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film 7 formed on said oxidized or nitrided porous polysilicon layer. Wherein a voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film. &lt;IMAGE&gt;</p>
申请公布号 EP0913849(A2) 申请公布日期 1999.05.06
申请号 EP19980116103 申请日期 1998.08.26
申请人 MATSUSHITA ELECTRIC WORKS, LTD. 发明人 KOMODA, TAKUYA;KOSHIDA, NOBUYOSHI
分类号 H01J1/30;H01J1/308;H01J1/312;H01J31/12;(IPC1-7):H01J1/30 主分类号 H01J1/30
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