| 摘要 |
<p>In a method of manufacturing a semiconductor device, a copper wiring film is formed in an interlayer insulating film by a damascene method. A protective insulating film is formed on the copper wiring film and the interlayer insulating film. Then, an opening is formed in the protective insulating film. Subsequently, an Al containing film is deposited on the protective insulating film to fill the opening. In this case, the Al containing film may be patterned. Instead, a CMP (chemical mechanical polishing) method may be performed to the Al containing film to embed the Al containing film in the opening. <IMAGE></p> |
