Semiconductor device has a fusible link portion which can be severed by low energy laser light

摘要

A semiconductor device has a fusible link portion (11, 12) which can be severed by laser light (4) and which satisfies the relationship L <= D- alpha , where L = fusible link portion length, D = laser beam spot diameter and alpha = laser beam alignment error. An Independent claim is also included for a semiconductor device production process comprising (a) forming several pairs of non-metallic conductive portions (31a, 31b, 32a, 32b) on a semiconductor substrate; (b) forming several metallic fusible link portions (11, 12) for pair-wise connection of the conductive portions; and (c) completely removing one or more of the fusible link portions using laser light (4).