发明名称 |
Semiconductor pressure sensor |
摘要 |
<p>In order to decrease a resistance component of lead portion (41 - 44) of a pressure sensor, surfaces of the lead portions other than gauge portions (31 - 34), and pad portions (51 - 54) of the pressure sensor are coated directly with a metallic thin film such as aluminum, or at least an acceptor impurity such as boron, potassium, phosphorus, antimony or arsenic, is doped into the lead portions (41 - 44) and the pad portions (51 - 54). <IMAGE></p> |
申请公布号 |
EP0913678(A2) |
申请公布日期 |
1999.05.06 |
申请号 |
EP19980119482 |
申请日期 |
1998.10.15 |
申请人 |
HITACHI, LTD.;HITACHI CAR ENGINEERING CO., LTD. |
发明人 |
MIKI, MASAYUKI;SUZUKI, SEIKO;TSUCHITA, KENJI;MIYAZAKI, ATSUSHI;KUBOTA, MASANORI;YAMAGUCHI, SHINICHI;SASADA, YOSHIYUKI |
分类号 |
G01L1/18;G01L9/00;G01L9/04;H01L29/84;(IPC1-7):G01L9/06 |
主分类号 |
G01L1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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