Semiconductor laser diode has a p-type gallium arsenide substrate

摘要

A semiconductor laser diode has a p-type GaAs substrate bearing a lower p-type AlGaAs cladding layer, an active layer and an upper n-type AlGaAs cladding layer formed of AlxGa1-xAs (x /-0.4) with a charge carrier concentration of <= 6/*10<17> cm<-3>. A semiconductor laser diode has (a) a p-type GaAs substrate; (b) a p-type semiconductor region including a lower p-type AlGaAs cladding layer on the substrate; and (c) an n-type semiconductor region which includes an upper n-type AlGaAs cladding layer and which is formed over an active layer on the p-type semiconductor region. The upper cladding layer has a light confinement region over the entire active layer surface and a ridge portion for current concentration and injection into a laser oscillation region of predetermined width in the active layer and is formed of AlxGa1-xAs (x = /-0.4) with a charge carrier concentration of <= 6/*10<17> cm<-3>.