| 摘要 |
<p>A process for forming a trench in a semiconductor material is provided. The process includes (a) providing a semiconductor substrate (22), a first mask layer (20) adjacent the surface of the semiconductor substrate, and a second mask layer (24) adjacent the surface of the first mask layer (20), the second mask layer (24) defining a first open area (26) and the first mask layer (20) defining a second open area (28) that is larger than the first open area (26) and aligned therewith in a manner so that in the area of the openings the first mask layer (20) is undercut with respect to the second mask layer (24); and (b) removing a portion of the semiconductor substrate (22) through the open area defined by the second mask layer (24) to form a trench in the semiconductor substrate (22). An IC device formed using the process is also provided.</p> |
