Verfahren zur Herstellung von Dünnschichttransistoren

摘要

A channel is formed by ion implantation through a drain and source conductive layer into an amorphous silicon layer using an etch-stop layer as mask and the implanted amorphous silicon layer is structured using the conductive layer and the etch-stop layer as masks. An amorphous silicon TFT production comprises: (a) applying and structuring a first conductive layer on a substrate to form a gate contact; (b) successively applying a gate insulation and amorphous silicon; (c) applying and structuring an etch-stop layer; (d) applying a second conductive layer for the drain and source connections; (e) forming the channel by ion implantation through the second conductive layer into the amorphous silicon layer using the etch-stop layer as mask; (f) structuring the second conductive layer as drain and source contacts; and (g) structuring the implanted amorphous silicon layer using the second conductive layer and the etch-stop layer as masks. An Independent claim is also included for a TFT produced by the above process and having an ion implantation-doped amorphous silicon layer.