| 摘要 |
The present invention enables siloxanes which have a detrimental effect on the quality of products during semiconductor production to be efficiently removed from silicon compound gases, and enables minute amounts of siloxanes in these gases to be accurately measured to a few ppb, thus allowing for improvements in quality control by offering silicon compound gases of high purity. Diatomaceous earth M filled into a removal column 2 is heated by heating means provided on the removal column 2, while an inert gas such as nitrogen or helium is fed from an inert gas delivery pipe 13 via a pressure regulator 5 and an entry valve 6 into the removal column 2, and is allowed to flow out through an outlet valve 8 in order to thermally activate the diatomaceous earth M. After activation, the removal column is cooled to a temperature of 60-0 DEG C., at which temperature a silicon compound gas S such as silane is fed through the pressure regulator 5 and the entry valve 6 into the removal column 2 so as to come into contact with the activated diatomaceous earth M. As a result, high-purity silicon compound gas which has been purified by removing siloxanes is let out through a gas vent pipe 9, from which it can be delivered through the outlet valve 8 to an area of use.
|
