发明名称 Apparatus and method for laser radiation
摘要 There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
申请公布号 US5900980(A) 申请公布日期 1999.05.04
申请号 US19970797965 申请日期 1997.02.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;TERAMOTO, SATOSHI;KUSUMOTO, NAOTO;TANAKA, KOICHIRO
分类号 H01L21/20;B23K26/073;G02B27/09;H01L21/268;H01L21/336;H01L29/786;H01S3/00;(IPC1-7):G02B27/10 主分类号 H01L21/20
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