发明名称 |
Method of fabricating a semiconductor wafer |
摘要 |
A method of fabricating a semiconductor wafers, which can prevent metal contamination when alkali etching is used. A semiconductor ingot is cut into wafers. The peripheral portion of the sliced wafers is chamfered. The chamfered wafers are then planarized by lapping. The planarized wafers are alkali etched. The alkali etched wafers are subjected to acid washing by using diluted mixed acid solution. The surface of the acid-washed wafers are then polished. The polished wafers are washed again.
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申请公布号 |
US5899731(A) |
申请公布日期 |
1999.05.04 |
申请号 |
US19970927034 |
申请日期 |
1997.09.10 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD. |
发明人 |
KAI, FUMITAKA;MAEDA, MASAHIKO;KAWATE, KENJI |
分类号 |
H01L21/308;C30B33/00;H01L21/302;H01L21/304;H01L21/306;(IPC1-7):C02F1/461 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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