| 摘要 |
PCT No. PCT/DE96/00415 Sec. 371 Date Sep. 8, 1997 Sec. 102(e) Date Sep. 8, 1997 PCT Filed Mar. 7, 1996 PCT Pub. No. WO96/28851 PCT Pub. Date Sep. 19, 1996For the simple production of a back surface field it is proposed that a boron-containing diffusion source layer (2) be applied to the rear (RS) of a silicon wafer (1) and boron be driven into the wafer to a depth of about 1 to 5 mu m at 900 to 1200 DEG C. This is done in an oxygen-containing atmosphere so that an oxide layer (4) is formed on open silicon surfaces, obviating the need to mask the regions not to be doped. After the removal of the oxide and source layer, phosphorus diffusion takes place and the back contact (3) is produced. It contains aluminum and, during the burn-in process, provides good ohmic contact.
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