发明名称 Bi-directional data input/output circuit of a synchronous memory device and the method for controlling the same
摘要 There is disclosed a bidirectional data input/output circuit of a synchronous memory device and the method for controlling the same according to the present invention. The synchronous memory device according to the present invention is aimed at solving a data confusion problem generated when a write operation subsequent to a data read operation is performed in a data input/output line. Though the data line is a bidirectional bus data line by which an input/output is also performed, it can be applied to a circuit construction in which high and low potential data are inputted/outputted through an independent dedicated line. In addition, there is provided an internal buffer for inputting a write data into the memory device. The circuit according to the present invention further includes a memory for storing a data signal generated upon a read operation, when a read operation subsequent in time to a write operation is performed; and a device for selecting as a write data the opposite signal of the data signal generated upon a read operation when the two data lines both become active.
申请公布号 US5901091(A) 申请公布日期 1999.05.04
申请号 US19980063371 申请日期 1998.04.21
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 LEE, JAE JIN
分类号 G11C11/413;G11C7/10;G11C7/22;G11C11/407;G11C11/409;G11C11/4096;G11C11/417;(IPC1-7):G11C16/04;G11C7/02;G11C8/00 主分类号 G11C11/413
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