发明名称 |
Bi-directional data input/output circuit of a synchronous memory device and the method for controlling the same |
摘要 |
There is disclosed a bidirectional data input/output circuit of a synchronous memory device and the method for controlling the same according to the present invention. The synchronous memory device according to the present invention is aimed at solving a data confusion problem generated when a write operation subsequent to a data read operation is performed in a data input/output line. Though the data line is a bidirectional bus data line by which an input/output is also performed, it can be applied to a circuit construction in which high and low potential data are inputted/outputted through an independent dedicated line. In addition, there is provided an internal buffer for inputting a write data into the memory device. The circuit according to the present invention further includes a memory for storing a data signal generated upon a read operation, when a read operation subsequent in time to a write operation is performed; and a device for selecting as a write data the opposite signal of the data signal generated upon a read operation when the two data lines both become active.
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申请公布号 |
US5901091(A) |
申请公布日期 |
1999.05.04 |
申请号 |
US19980063371 |
申请日期 |
1998.04.21 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE, JAE JIN |
分类号 |
G11C11/413;G11C7/10;G11C7/22;G11C11/407;G11C11/409;G11C11/4096;G11C11/417;(IPC1-7):G11C16/04;G11C7/02;G11C8/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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