| 摘要 |
A method of creating an STC structure, used for high density, DRAM designs, has been developed. The process consists of creating a storage node electrode, for the STC structure, with increased surface area, resulting from the formation of protruding polysilicon shapes. The protruding polysilicon shapes are obtained using dielectric regions as a mask during a selective, anisotropic RIE procedure, used to define the storage node electrode shape. The dielectric regions are created via oxygen ion implantation into exposed regions of a polysilicon layer. An anneal is used to convert the oxygen implanted polysilicon regions, to dielectric regions.
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