发明名称 CMOS buffer having stable threshold voltage
摘要 A CMOS buffer circuit having a trip point which is insensitive to variations in temperature, supply voltages and manufacturing processes. The circuit output stage has three series-connected MOS transistors including an N channel pull-down transistor connected between the buffer output and the circuit common, a first P channel pull-up transistor connected to a positive supply voltage and a second P channel pull-up transistor connected between the first P channel transistor and the buffer output. The gates of the first P channel transistor and the N channel transistor are connected together to form the buffer input. An N channel reference transistor is used to generate a reference current which is mirrored into the output stage by a third P channel transistor which is connected to the second P channel transistor of the output stage so as to form a current mirror. Circuitry is provided to bias the reference transistor in the same manner that the N channel transistor is biased when the buffer input and output are at a predetermined trip point. Thus, the N channel transistor will cause the buffer circuit to trip at the predetermined trip point notwithstanding variations in the power supply voltage, temperature and processing.
申请公布号 US5900741(A) 申请公布日期 1999.05.04
申请号 US19970929209 申请日期 1997.09.09
申请人 MICRON TECHNOLOGY, INC. 发明人 ROOHPARVAR, FRANKIE F.
分类号 H03K17/16;H03K19/003;H03K19/0185;(IPC1-7):H03K17/16;H03K19/094 主分类号 H03K17/16
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