TRANSIENT DEVELOPMENT PREVENTION CIRCUIT AT POWER ON,申请号KR19930030735U-传众专利搜索

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发明名称	TRANSIENT DEVELOPMENT PREVENTION CIRCUIT AT POWER ON
摘要
申请公布号	KR137205(Y1)	申请公布日期	1999.05.01
申请号	KR19930030735U	申请日期	1993.12.27
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	YUN, SUK-HO
分类号	H04N5/63;(IPC1-7):H04N5/63	主分类号	H04N5/63
代理机构		代理人
主权项
地址

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