SOLID STATE X-RAY IMAGING DEVICE

摘要

An x-ray image detection device (12) includes a luminescent layer (28) containing an x-ray sensitive phosphor, an amorphous silicon Schottky barrier diode array layer (30), a polysilicon thin film transistor array layer (32), and read-out circuitry (34). The phosphor in the luminescent layer (28) converts incident x-rays to corresponding visible light radiation. The diode array generates an electrical signal corresponding to the intensity of light from the layer (28). Current generated in photodiode array (30) is fed to the gates of the transistors in array layer (32). Read-out circuitry (34) amplifies the signals in the transistors in array layer (32), and converts the signals to digital form.