| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve yield and productivity in high volume while chip yield is improved as well. SOLUTION: (a): a masking process where, on the surface of a semiconductor wafer 1, such metal mask 3 as only a part along a chip division line is exposed is formed, (b), (c), (d): after a first and third ion implantation processes where ion implantation layers 4a, 4b, and 4c distributed discretely in depth direction of the semiconductor wafer 1 at a position along the division line are formed are sequentially executed, a mask removing process where the metal mask 3 is removed, and a thermal treatment process where a peeling off phenomenon along a defective layer part formed with ion implantation layers 4a, 4b, and 4c by performing thermal treatment with the semiconductor wafer 1 is generated, are sequentially performed. In the thermal treatment process, the semiconductor wafer 1 is split along the division line to provide a plurality of chips.</p> |
